Date of Original Version
2009
Type
Article
Published In
Phys. Rev. B 80, 075320 (2009).
Abstract or Table of Contents
We show that surface states within the conduction band of n-type GaAs(110) surfaces play an important role in reducing the tunneling current out of an accumulation layer that forms due to an applied potential from a nearby probe tip. Numerical computation of the tunneling current combined with an electrostatic potential computation of the tip-induced band bending (TIBB) reveals that occupation of the surface states limits the TIBB, thus leading to the limitation of the accumulation. As a result, the tunneling current out of the accumulation layer is strongly suppressed, which is in quantitative agreement with the experiment.