Date of Original Version

12-2008

Type

Article

Abstract or Description

Cross-sectional scanning tunneling microscopy results on GaSb quantum wells and dots in GaAs are found to exhibit a narrow, sharply defined contrast of the nanostructure at negative sample bias, but a smoothly broadened contrast at positive sample bias. This contrast is related to the specific type-II band alignment of GaSb/GaAs heterostructures in combination with tip-induced band bending. The corresponding model is quantitatively verified by numerical simulations of band bending and tunnel current profiles combined with calculations of cleavage-induced strain relaxation.

DOI

10.1063/1.3117492

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Published In

J. Appl. Phys. , 105, 093718.