Date of Original Version

2008

Type

Article

Abstract or Description

Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using three-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap of 1.90 eV, which is appropriate to the disordered InGaP alloy, a valence band offset of 0.38±0.01 eV is deduced along with the corresponding conduction band offset of 0.10±0.01 eV (type I band alignment).

DOI

10.1063/1.2902828

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Published In

J. Appl. Phys., 103, 073704.