Date of Original Version




Published In

Physica B: Condensed Matter Volumes 273–274, 15 December 1999, Pages 796–802

Abstract or Table of Contents

The use of cross-sectional scanning tunneling microscopy (STM) to study strain in semiconductor heterostructures is discussed. In particular, intermixing between constituent heterostructure layers leads to internal strains in the heterostructure, and these strained regions are evident by displacement of the cleavage surface formed in the STM study. A theoretical analysis is made of the magnitude of electronic compared to mechanical contributions to the contrast of STM images, from which it is found that the former are relatively small, on the order of 0.1Å, for typical InxGa1−xAsyP1−y heterostructures imaged with sufficiently large, positive sample bias.