Date of Original Version

10-2000

Type

Article

Published In

Applied Surface Science Volume 166, Issues 1–4, 9 October 2000, Pages 165–172

Abstract or Table of Contents

The reconstruction and growth kinetics of gallium nitride (0001) and (0001̄) surfaces are studied using scanning tunneling microscopy (STM), reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED). Results for bare GaN surfaces are summarized, with particular attention paid to the “pseudo-1×1” reconstruction of the (0001) face. Changes in the surface structure and kinetic processes due to indium co-deposition during growth are discussed.

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