Type

Article

Abstract or Description

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 × 109 cm—2 for edge dislocations and 1 × 107 cm—2 for screw dislocations are achieved in GaN films of 1 μm thickness grown under optimal conditions. Reverse leakage is observed near some dislocations, although the majority of dislocations do not produce leakage.

DOI

10.1002/1521-396X(200112)188:2<595::AID-PSSA595>3.0.CO;2-S

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Published In

physica status solidi (a), 188, 2, 595-599.