Date of Original Version

2002

Type

Conference Proceeding

Abstract or Description

M-plane GaN(1 -1 0 0) is grown by plasma assisted molecular beam epitaxy on ZnO(1 -1 0 0) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1 -1 0 0) GaN films are obtained, with a slate like surface morphology. On the GaN(1 -1 0 0) surfaces, reconstructions with symmetry of c(2x2) and approximate "4x5" and are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the "4x5" structure consisting of monolayers of Ga terminating the GaN surface.

DOI

10.1557/PROC-743-L4.1

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Published In

Mater. Res. Soc. Symp. Proc. , 743, L4.1.1.