Date of Original Version

2003

Type

Article

Abstract or Description

GaN is grown by plasma assisted molecular beam epitaxy on ZnO(1 1 00) substrates. Well-oriented (1 1 00) GaN surfaces are obtained, and (1 1 01) oriented facets are also observed. On the GaN(1 1 00) surfaces under Ga-rich conditions a surface reconstruction with approximate symmetry of "4×5" is found. A model is proposed in which this reconstruction consists of ≥ 2 monolayers of Ga terminating the GaN surface

DOI

10.1063/1.1560558

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Published In

Appl. Phys. Lett. , 82, 1793.