Date of Original Version
2003
Type
Article
Published In
Appl. Phys. Lett. 82, 1793 (2003)
Abstract or Table of Contents
GaN is grown by plasma assisted molecular beam epitaxy on ZnO(1 1 00) substrates. Well-oriented (1 1 00) GaN surfaces are obtained, and (1 1 01) oriented facets are also observed. On the GaN(1 1 00) surfaces under Ga-rich conditions a surface reconstruction with approximate symmetry of "4×5" is found. A model is proposed in which this reconstruction consists of ≥ 2 monolayers of Ga terminating the GaN surface