Date of Original Version

2003

Type

Article

Abstract or Description

Cross-sectional scanning tunneling microscopy has been used to study variations in the source gas switching sequences in lattice-matched InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite element analysis, changes in well–barrier interface strain can be understood in terms of As/P exchange and As memory effect in the growth chamber. Results from annealed samples indicate a greater interdiffusion of group-V species than group-III species.

DOI

10.1016/S0022-0248(02)02224-8,

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Published In

Journal of Crystal Growth , 249, 3-4, 437-444.