Date of Original Version

12-2003

Type

Article

Abstract or Description

Spectroscopic ellipsometry (SE) is used to determine GaN surface termination during growth with metal-organic vapor phase epitaxy (MOVPE) by a correlation to well known results of plasma-assisted molecular beam epitaxy (PAMBE). The results manifest that in MOVPE under typical growth conditions the surface is not terminated by a Ga-bilayer as suggested for MBE. Moreover, it turns out that ellipsometry can be used to characterize the surface reconstruction in wurtzite GaN similar as reflectance anisotropy does for cubic III–V-compounds. The optical spectra for the PAMBE reveal clear differences between growth under Ga-rich and N-rich conditions, which are attributed to the presence of a Ga-bilayer and various N-rich reconstructions on the surface [1]. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

DOI

10.1002/pssc.200303833

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Published In

physica status solidi ©, 8, 2938-2943.