Date of Original Version

2004

Type

Article

Abstract or Description

Scanning tunneling spectroscopy is used to study p-type Ge(111)c(2×8) surfaces at temperatures between 7 and 61 K and over a wide range of tunnel currents. The spectral feature arising from Ge rest atoms is found to shift in voltage with increasing tunnel current. A comparison of the current dependence of the results with electrostatic computations of tip-induced band bending yields poor agreement. A model is discussed in which the observed shift in the rest-atom state arises from an accumulation of nonequilibrium carriers at the surface.

DOI

10.1103/PhysRevB.69.081309

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Published In

Phys. Rev. B , 69, 081309R.