Date of Original Version
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Abstract or Description
In this paper, we explore the possibility of using STT-RAM technology to completely replace DRAM inmain memory. Our goal is to make STT-RAM performance comparable to DRAM while providing substantial power savings. Towards this goal, we first analyze the performance and energy of STT-RAM, and then identify key optimizations that can be employed to improve its characteristics. Specifically, using partial write and row buffer write bypass, we show that STT-RAM main memoryperformance and energy can be significantly improved. Our experiments indicate that an optimized, equal capacity STT-RAM main memory can provide performance comparable to DRAM main memory, with an average 60% reduction in main memory energy.
Proceedings of the IEEE International Symposium on Performance Analysis of Systems and Software (ISPASS), 2013, 256-267.